Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory
Jae Hoon Jang, Han‐Soo Kim, Wonseok Cho, Hoosung Cho, Jinho Kim, Sun Il Shim, Younggoan Jang, Jaehun Jeong, Byoungkeun Son, Dong Woo Kim, Kihyun, Jae-Joo Shim, Jin Soo Lim, Kyoung Hoon Kim, Su Youn Yi, Ju Young Lim, De-will Chung, Hui-Chang Moon, Sungmin Hwang, Jong‐Wook Lee · Symposium on VLSI Technology · 2006
Vertical NAND flash memory cell array by TCAT (terabit cell array transistor) technology is proposed. Damascened metal gate SONOS type cell in the vertical NAND flash string is realized by a unique dasiagate replacementpsila process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.