A new GIDL phenomenon by field effect of neighboring cell transistors and its control solutions in sub-30 nm NAND flash devices
Il Han Park, Wook-Ghee Hahn, Ki‐Whan Song, Ki Hwan Choi, Hyun-Ki Choi, Sung Bok Lee, Chang-Sub Lee, Jaihyuk Song, Jin Man Han, Kye Hyun Kyoung, Young-Hyun Jun · 2012
We present a new field effect mechanism on IGIDLin NAND flash strings. According to the proposed 5-terminal GIDL model, special care should be taken to optimize the biasing levels of inhibit scheme. Suggested incremental biasing scheme can be one of the solutions for reducing critical field that enhances boosting efficiency and maximizes memory yields.