High speed IDDQ current sensors for VLSI system testing
Jaime Ramirez‐Angulo, G. Gonzalez-Altamirano · 2002
A scheme for measuring IDDQ is presented. It is based on a current sensor which consists of a large W/L MOS transistor in parallel with a small W/L transistor. For IDDQ measurement the large transistor is turned off leaving only the small W/L transistor in the IDDQ's current path. The potential of the proposed scheme for high resolution, high speed (>1 MHz) IDDQ measurements is discussed with the aid of transistor level computer simulations.