A Investigation of E/W Cycle Characteristics for 2y-nm MLC NAND Flash Memory Devices
YeonJoo Jeong, Sangjo Lee, Sunghoon Cho, Pyunghwa Kim, Milim Park, SungPyo Lee, Hyunyoung Shim, Myoung Kwan Cho, Kun-Ok Ahn, Gihyun Bae, Sung-Wook Park · 2012
In this paper, the challenges of NAND flash memory devices with E/W cycling characteristics are discussed. The large VTH shift in 2y-nm technology is investigated with various causes such as air-gap, poly2 valley plug gap-fill and string current. The countermeasures including process and operation algorithm are also exhibited to improve the reliability of 2y-nm NAND Flash memory device.