Statistical modeling of GaAs MESFETs
J.W. Bandler, R.M. Biernacki, S.H. Chen, Jian Jun Song, S. Ye, Q.J. Zhang · 2002
The authors contrast the statistical extraction of GaAs MESFET equivalent circuit model parameters and physical model parameters from wafer measurements. It is observed that the equivalent-circuit model of A. Materka and T. Kacprzak (1985) provides a better match for individual devices but the model based on physical parameters of P.H. Ladbrooke (1989) provides a better estimate of device statistics. It is also shown that the Materka and Kacprzak equivalent-circuit model can accurately fit the data from which the model parameters are extracted, because it has fewer constraints than the physical model.>