High-speed operation of resonant tunnelling flip-flopcircuit employing MOBILE (monostable-bistable transition logic element)
K. Maezawa, Hideaki Matsuzaki, Kunihiro Arai, Taiichi Otsuji, Motomichi YAMAMOTO · Electronics Letters · 1997
A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18 Gbit/s were demonstrated at room temperature.