32nm 3-bit 32Gb NAND Flash Memory with DPT (double patterning technology) process for mass production
Bong Tae Park, Jaihyuk Song, Eun Suk Cho, Seung Wan Hong, Jae Youn Kim, Yong Ju Choi, Yong Seok Kim, Seung Jun Lee, Chi Kyoung Lee, Dae Woong Kang, Dong Jun Lee, Byoung Taek Kim, Yong‐Joon Choi, Woon Kyung Lee, Jeong-Hyuk Choi, Kang-Deog Suh, Tae‐Sung Jung · 2010
32nm 3-bit 32Gb NAND Flash Memory for mass production has been successfully developed for the first time. To shorten the development time and lower the cost, one side double patterning technology in a gate direction and the minimum number of spare blocks have been adopted. Additionally, considering endurance and data retention of cell characteristics, the optimal gate and active lengths are fixed in a stage of device design.