Measurement of characteristics of organic transistor structures
N. Kus, Зенон Юрійович Готра, Владислав Володимирович Черпак, Павло Йосипович Стахіра, Григорій Іванович Барило · Eastern-European Journal of Enterprise Technologies · 2014
The system for measuring parameters of organic transistor structures was proposed and developed in the paper. Circuit diagram was simulated in the software environment Proteus. Output and transfer current-voltage characteristics of organic transistor structures were studied.To develop a measuring system, modern elements of electronic equipment were used. Current-voltage characteristics, which show the work of organic transistor structures were shown, such as output and transfer characteristics, that is the dependence of the drain-source current (Ids) on the drain-source voltage (Vds) and gate voltage (Vg). The studies at different gate voltages Vg = 0÷100V with the interval 10V were conducted. It is shown that at the increase in the gate voltage, the drain-source current (Ids) increased within about 0.2 mA÷0.1 mA. This allows to use organic FETs both in display panels and in the smart cards since in the display panels transistors are used for color control and in smart cards - for improving information transfer. (This should remain so.)