A high programming throughput 0.35 μm p-channel DINOR flash memory
O. Sakamoto, Hiroshi Onoda, Toshiaki Katayama, K. Hayashi, N. Yamasaki, K. Sakakibara, T. Ohnakado, Hiroshi Takada, Naoki Tsuji, N. Ajika, M. Hatanaka, Hirokazu Miyoshi · 2002
A high programming throughput p-channel DINOR flash memory with the BBHE injection programming method has been developed using 0.35 /spl mu/m CMOS process. This programming method realizes a high programming throughput of 8 nsec/Byte by utilizing 512 Byte parallel program operation with a low leakage current of less than 250 /spl mu/A. We have also demonstrated the good erase/write cycling endurance of 1/spl times/10/sup 5/. This process and device technology is very promising to the high performance 64 Mbit flash memories and future flash devices.