Extraction of 3-D trap position in NAND flash memory considering channel resistance of pass cells and bit-line interference
S. M. Joe, Min-Sik Jung, Joon Woo Lee, M. S. Lee, B. S. Jo, Jong‐Ho Bae, S. K. Park, K Han, Jaeyun Yi, G. S. Cho, Jung Ho Lee · 2011
We have extracted the exact position (x T and y T ) and energy of a trap in tunnel oxide which induces RTN by considering the channel resistances of pass cells in floating gate NAND flash memory string. Moreover, the trap position (z T ) along the channel width direction was also extracted by using an interference between adjacent bit-lines.