A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput
Ken Takeuchi, Yoshihiko Kameda, Shinji Fujimura, Hiroyuki Otake, Koji Hosono, Hidehiro Shiga, Yoshihiro Watanabe, Takuya Futatsuyama, Y. Shindo, M. Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, K. Hatakeyama, S. Tanaka, Tatsuya Kamei, Jiayi Fu, A. Cernea, Yan Jun Li, Masaaki Higashitani · 2006
Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual VDDscheme enabling efficient use of 1MB blocks