Modeling a single electron turnstile in HSPICE
Fabrizio Lombardi, Wei Wei, Jie Han · 2012
This paper presents a novel HSPICE circuit model for designing and simulating a Single-Electron (SE) turnstile, as applicable at the nanometric feature sizes. The proposed SE model consists of two nearly similar parts whose operation is independent of each other; this disjoint feature permits to accurately model the sequential transfer of electrons through the turnstile in the storage node (modeled on a voltage level basis). It therefore avoids the transient (current-based) nature of a previous model. The model has been simulated and results show that it can correctly operate at 32 nm with excellent stability in its operation. Extensive simulation results are presented to substantiate the advantages of using the proposed model with respect to changes in the circuit model parameter.