A multi-speed digital cross-connect switching VLSI using new circuit techniques in dual port RAMs
S. Shinagawa, Yasuo Satoh, M. Mizukami, Y. Sonobe, Y. Nakano, T. Kanno · 2002
The authors describe a multi-speed digital cross-connect switching VLSI using innovative circuit techniques in dual port RAMs, and adopting 0.8- mu m CMOS technology. The five embedded dual port RAMs (four 1 kw*9 b, one 256 w*18 b) each achieved an access-time of 3.7 ns and 100-mW power consumption at 38.88-MHz operation. A block diagram of the VLSI is presented, the chip features are described, and the characteristics of the RAMs are summarized.>