A novel high density contactless flash memory array using split-gate sources-side-injection cell for 5 V-only applications
Yanfeng Ma, Chin‐Sheng Pang, Jay Pathak, Shouchang Tsao, Chih-Shen Chang, Y. Yamauchi, M. Yoshimi · 2002
A high density 5 V-only flash memory array with sector erase mode is presented. It features a new triple poly split-gate source-side-injection cell in a contactless array to achieve small cell size, high programming efficiency, high cell current with no over-erase concerns. The array design and its operating conditions in various modes are discussed. Various disturb reduction techniques, array performance and speed improvement schemes are presented. >