Multi-level p-channel flash memory
Frank Ruei-Ling Lin, Yen-Sen Wang, Chih-Wei Hsu · 2002
Recently multilevel flash memory has attracted many developers' attentions. P-channel flash memory has been found to be a promising candidate due to the low-voltage and low-power programming and the ease of scaling-down. Two programming mechanisms: (a) Channel Hot Hole Induced Hot Electron (CHHIHE), and (b) Band-To-Band Tunneling Induced Hot Electron (BTBTIHE) can be used as a high efficient programming method in p-channel rather than in n-channel flash memory. Based upon CHHIHE and BTBTIHE programming, the multilevel applications and analysis of p-channel flash memory are presented. Different engineering guidelines are given for these two programming techniques.