Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory
Victor Chao-Wei Kuo, Chih-Ming Chao, Chih-Kai Kang, Liwei Liu, Tzung-Bin Huang, Liang-Tai Kuo, Shi-Hsien Chen, Houng-Chi Wei, Hann-Ping Hwang, Saysamone Pittikoun · 2006
In this paper, one of the future nonvolatile memory candidates, SONOS with p+-poly gate, has been fully characterized in cell program/erase operation and data retention performance. Novel source-side injection programming and F-N erase schemes have been utilized on both n+- and p+-poly gate, and its characteristics are very satisfactory and can be easily used as a state-of-the-art flash memory. For data retention, our experimental result shows p+-poly does have a slower charge decay rate than does n+-poly gate. This is because of the work function difference between n+- and p+-poly gate that causes the different amount of trapped electrons between two of them. We also predict the charge loss characteristics with various baking temperature for n+- and p+-poly gate, which can tell us the concrete threshold voltage at any read delay time instead of the traditional and inaccurate long time projection from short time status