A self adaptive programming method with 5 mV accuracy for multi-level storage in FLASH
L.D. Engh, Albert Victor Kordesch, Chun-Mai Liu · 2003
The presented multi-level storage memory system uses a self-adaptive method that improves the cell model with each successive program cycle, and accommodates cell variations and noise. An accuracy of 5 mV is achieved within eight cycles, which total 125 /spl mu/s. Algorithm control circuits occupy 1 mm/sup 2/ of area in a 0.5 /spl mu/m SSI FLASH process.