Optimization of a submicron HIMOS Flash E 2 PROM cell for implementation in a virtual ground array configuration
Jan Van Houdt, Dirk Wellekens, Luc Haspeslagh, L. Deferm, G. Groeseneken, H.E. Maes · European Solid-State Device Research Conference · 1993
This paper describes the implementation of High Injection MOS Flash E2PROM devices in a 0.7?m CMOS technology. The cell has been optimized from the point of view of cell area as well as programming speed. A virtual ground array configuration is proposed to scale the cell area down to the range of 15?m2. The device is programmed in a few hundreds of nanoseconds at 5V-only operation and in 100?s at 3.3V-only operation. The combination of these results with a low development entry cost shows that the HIMOS cell is a viable candidate for fast-programmable 5V-only (and 3.3V-only) medium-to-high density Flash memories.