Static and dynamic behavior of memory cell array opens and shorts in embedded DRAMs
Zaid Al-Ars, A.J. van de Goor · 2001
Abstract: Fault analysis of memory devices using defect injection and simulation is becoming increasingly impor-tant as the complexity of memory faulty behavior increases. In this paper, this approach is used to study the effects of opens and shorts on the faulty behavior of embedded DRAM (eDRAM) devices produced by Infineon Technolo-gies. The analysis shows the existence of previously de-fined memory fault models, and establishes new ones. The paper also investigates the concept of dynamic faulty be-havior and establishes its importance for memory devices. Conditions to test the newly established fault models are also given. Key words: Embedded DRAM, functional fault models, fault primitives, defect simulation, opens, shorts.