A 180 MHz direct access read 4.6Mb embedded flash in 90nm technology operating under wide range power supply from 2.1V to 3.6V
Hung-Chang Yu, Ku-Feng Lin, Kai-Chun Lin, Yu-Der Chih, Sreedhar Natarajan · 2013
To achieve the 180MHz read speed for 4.6 Mb Flash memory, we propose an adaptive WL boost driver (AWBD) and a high-speed sensing-assist (HSSA) scheme to fast activate the word-line and bitline. AWBD reduces 45% word-line rising time. HSSA establishes bitline bias within 500ps under heavy bit-line load. This work implemented in 90nm process and the access time 5.2ns is achieved.