Fin width variation effects on program disturbance characteristics in a NAND type bulk fin SONOS flash memory
Il Hwan Cho, Il Han Park, Jong‐Ho Lee, Hyungcheol Shin, Byung‐Gook Park, Jong Duk Lee · 2007
We have analyzed program inhibition in bulk fin SONOS flash memory devices with a variation of fin body width. Compared to the coupled channel potential of wide fin channel device during programming, the potential of narrow fin structure device was much large. Relationship between the fin width and the program disturbance characteristics can be useful in memory design and optimization.