Increase sensitivity of the sensor based on bipolar magnetotransistor by minimization initial output offset
Robert Dmitrievich Tikhonov, А. В. Козлов, Yu.A. Chernova, Sergey A. Polomoshnov · 2009
In this article represent the experimental investigation of initial offset voltage between collectors in the integrated circuit including dual-collector lateral npn-type bipolar magnetotransistor in a p-well with polysilicon resistors. Choice of magnetotransistor circuit defines an operating mode and its influence on the offset. Initial offset between collectors voltage is reduced to value less than 1 mV that allows to increase relative useful output signal for a weak magnetic field.