A novel floating gate engineering technique for improved data retention of flash memory devices
Jing Pu, D.S.H. Chan, Byung Jin Cho · 2008
We propose one novel approach on engineering floating gate (FG) of Flash memory cell: carbon incorporation into polysilicon FG. This technique demonstrated improvement in retention and larger program/erase Vthwindow, especially for smaller capacitance coupling ratio cell which is important for future scaled Flash memory cells.