Hot carrier self convergent programming method for multi-level flash cell memory
Ph. Candeller, F. Mondon, Bernard Guillaumot, G. Reimbold, H. Achard, F. Martín, J. M. Hartmann · 2002
Flash EEPROM multi-level programming requires accurate control of programmed threshold voltages. A hot carrier convergent programming method with drain current monitoring is proposed to reduce both Vth dispersion and write-erase window closure during endurance test. Feasibility and improved reliability is demonstrated for a four level storage on 0.35 /spl mu/m flash cells.