Self-boosted charge injection for 90-nm-node 4-Gb multilevel AG-AND flash memories programmable at 16 MB/s
H. Kurata, Kazuo Otsuga, Y. Sasago, T. Arigane, Tsutomu KAWAMURA, Takashi Kobayashi, Yoshinori IKEDA, Akira Sato, K. Kozakai, S. Noda, M. Shimizu, Osamu Tsuchiya, K. Furusawa · 2004
This paper presents a high-speed multilevel programming scheme for 90-nm node AG-AND flash memories. Source-side hot-electron injection programming with self-boosted charge, accumulated in inversion-layer local bit-lines under AGs, reduces the dispersal of programming characteristics and also reduces the time overhead of pre-charging the bit-lines. With this self-boosted charge injection scheme, programming at a fast 16 MB/s is obtainable in 4-Gb flash memory with an actual cell size of 2F/sup 2//bit.