The performance and reliability enhancement of ETOX p-channel flash EEPROM cell with p-doped floating-gate
Hui-Wen Tsai, Pei-Yu Chiang, Steve Shao-Shiun Chung, D.S. Kuo, M.S. Liang · 2004
In this paper, we proposed a simple approach for designing reliable and high performance p-channel Flash EEPROM cell from the floating-gate engineering point of view. In other words, a p-type doped floating gate used in a p-channel flash cell can achieve this goal. Results show that the programming speed, gate/drain disturb, read lifetime, and data retention in p-type floating-gate cell are much better than those of n-type floating-gate cell; except that p-type floating-gate cell has slower erasing speed. These results can be used as a guideline for designers to choose.