CMOS open defect detection based on supply current in time-variable electric field and supply voltage application
Masaki Hashizume, M. Ichimiya, Hiroyuki Yotsuyanagi, T. Tamesada · 2002
In this paper, a new test method is proposed for detecting open defects in CMOS ICs. The method is based on supply current of ICs generated by applying time-variable supply voltage and electric field from the outside of the ICs. The feasibility of the test is examined by some experiments. The empirical results show that, by using the method, open defects in CMOS ICs can be detected. Also, the test input vectors for the test method are proposed and it is shown that they can be generated more easily than functional test methods based on stuck-at fault models.