Multi-layered Vertical Gate NAND Flash overcoming stacking limit for terabit density storage
Wonjoo Kim, Sangmoo Choi, Junghun Sung, Taehee Lee, Chulmin Park, Hyoungsoo Ko, Juhwan Jung, Inkyong Yoo, Yoondong Park · Symposium on VLSI Technology · 2006
Vertical Gate NAND (VG-NAND) Flash array with multi-active layers has been successfully integrated for the first time. VG-NAND confirmed stable operations of program, body erase, and read. There is no aggravation on program disturbance with increased number of layers due to an architecture of VG-NAND with vertical blocks.