A New Electroabsorption Modulator with Negative Chirp Operation Using a Parallel Field
Koichi Wakita, Yohei Toyoda, Tomokazu Kojima · Japanese Journal of Applied Physics · 2002
A new electroabsorption modulator consisting of a lateral p-i-n configuration whose i-region is composed of multiple quantum wells (MQWs) is proposed, and the device characteristics as well as polarization insensitivity and low insertion loss are simulated for high-speed, low-driving-voltage operation. The 3-dB bandwidth and the driving voltage required to achieve a 20-dB extinction ratio are estimated to be over 250 GHz and less than 2 V, respectively, assuming that the speed is limited by the device capacitance. It has been made clear that this device can perform at full negative-chirp operation with low transmission loss. The superiority of this device to the previously reported one that operates based on the quantum-confined Stark effect (QCSE) is also discussed in terms of the allowability of incidental optical power.