A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate
Yan Jun Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Park Jong, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada · 2008
We present an 8 MB/s 3-bit per cell (D3) NAND flash memory that uses the same number of ECC bytes as 2-bit per cell (D2) NAND. Since no extra columns are added in D3 devices, the 16 Gb D3 chip in this paper achieves 0.112 Gb/mm2compared to 0.079 Gb/mm2on D2 chips, as previously reported (K. Takeuchi et al.,2006). This is a 41% improvement in Gb/mm2and a 20% gain in overall die-size.