A content addressable memory using magnetic domain wall motion cells
Ryusuke Nebashi, Noboru Sakimura, Yukihide Tsuji, Shunsuke Fukami, Hiroaki Honjo, S. Saito, S. Miura, Nobuyuki ISHIWATA, Kentaro Kinoshita, Takahiro Hanyu, Tetsuo Endoh, N. Kasai, Hideo Ohno, Tadahiko Sugibayashi · 2011
A 5-ns search operation of a spintronic content addressable memory (Spin-CAM) was demonstrated, and the speed was the fastest to date. The CAM macro, with a capacity of 16 kb, was fabricated using 90-nm CMOS and domain wall (DW) motion processes. The operating speed was comparable to that of SRAM-based CAM. We also propose a CAM which has multiple contexts by improving the CAM cell circuit to enhance the SoC's performance. The estimated cell area is 3.5 µm2, which is less than that of an SRAM-based CAM cell, when a four-context CAM is designed.