Circuit-level techniques to control gate leakage for sub-100nm CMOS
Fatih Hamzaoglu, Mircea R. Stan · 2002
Although still negligible for state-of-the-art CMOS, gate leakage will become significant in the future for sub-100nm technologies, due to the scaling of oxide thickness. We propose several circuit techniques to control gate leakage based on the fact that PMOS transistors with SiO2 gate oxide have an order of magnitude smaller gate leakage than NMOS transistors in the same technology. First, we compare n-type domino with p-type domino circuits in terms of performance, leakage and switching power, and explore the different tradeoffs between performance and power. Second, we compare n-type with p-type gating for MTCMOS to control the leakage during sleep. The proposed circuits are simulated for a predictive 70nm CMOS technology with 10Å gate oxide thickness and 1.2V supply voltage.