LLS: Cooperative integration of wear-leveling and salvaging for PCM main memory
Lei Jiang, Yu Du, Youtao Zhang, Bruce R. Childers, Jun Yang · 2011
Phase change memory (PCM) has emerged as a promising technology for main memory due to many advantages, such as better scalability, non-volatility and fast read access. However, PCM's limited write endurance restricts its immediate use as a replacement for DRAM. Recent studies have revealed that a PCM chip which integrates millions to billions of bit cells has non-negligible variations in write endurance. Wear leveling techniques have been proposed to balance write operations to different PCM regions. To further prolong the lifetime of a PCM device after the failure of weak cell, techniques have been proposed to remap failed lines to spares and to salvage a PCM device that has a large number of failed lines or pages with graceful degradation. However, current wear-leveling and salvaging schemes have not been designed and integrated to work cooperatively to achieve the best PCM device lifetime. In particular, a non-contiguous PCM space generated from salvaging complicates wear leveling and incurs large overhead. In this paper, we propose LLS, a Line-Level mapping and Salvaging design. By allocating a dynamic portion of total space in a PCM device as backup space, and mapping failed lines to backup PCM, LLS constructs a contiguous PCM space and masks lower-level failures from the OS and applications. LLS seamlessly integrates wear leveling and salvaging and copes well with modern OSs, including ones that support multiple page sizes. Our experimental results show that LLS achieves 24% longer lifetime than a state-of-the-art technique. It has negligible hardware cost and performance overhead.