Testing for coupled cells in random-access memories
Jacob Savir, W.H. McAnney, S.R. Vecchio · 2003
Five test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n-word-by-1-b random-access memory. In all five test strategies the data-in line is randomly driven. Three of five strategies use random selection of both the address lines and the read/write control. The other two strategies sequentially cycle through the address space with deterministic setting of the read/write control. The relative merit of these five strategies is measured by the average number of accesses per address needed to meet a standard test quality level. It is concluded that ETWO (explicit memory test with word operations) offers the best performance and is quite easy to implement.>