Analytical Extraction of Extrinsic and Intrinsic FET Parameters
B.L. Ooi, Zhong Zheng, M.S. Leong · IEEE Transactions on Microwave Theory and Techniques · 2009
The least squares solution for the entire small-signal equivalent circuit is itself a formidable task. In this paper, a systematic approach comprising the total and conventional least squares method in analytically obtaining the small-signal field-effect transistor (FET) parameters values is introduced. The proposed method eliminates the conventional ldquocold FETrdquo and ldquohot FETrdquo modeling constraints and allows an ease in inline process tracking.