Temperature-sensitive switching device thermosenstor
J. Nakata, Toshio Sogo, Kazunori Yamanaka, Yutaka Mihashi, Kiyoshi Shirahata · 1977
A p-n-p-n temperature-sensitive switching device "Thermosenstor" operatable in the temperature range of -30°C to 150°C has been developed by implanting argon ion to the collector junction of the p-n-p-n structure. Argon ion implantation also permits the device to be less sensitive to the dV/dt triggering as well as to eliminate the on-off switching temperature differential. The construction, characteristics and reliability are described.