Fully 3-Dimensional NOR Flash Cell with Recessed Channel and Cylindrical Floating Gate - A Scaling Direction for 65nm and Beyond
S.-P. Sim, K. S. Kim, H.K. Lee, Jin-Man Han, Wook-Hyun Kwon, Junghwan Han, Bun Yeoul Lee, Chang Won Jung, J.H. Park, Dong Jun Kim, Dong-Hoon Jang, W.H. Lee, Chang‐Soo Park, K. Kim · 2006
For the first time, a fully 3-dimensional (3-D) flash cell with recessed channel and cylindrical floating gate is successfully integrated with 65nm MLC NOR flash technology. Key process technologies to achieve the novel cell structures are shown to be highly feasible. Superior scalability and comparable device characteristics including Vthdistribution and tunnel oxide reliability are proved through 512Mb full chip integration. Intrinsic immunity on the short channel effect of this 3-D cell opens a promising path for the continued scaling of the floating gate flash memories for 65nm and beyond