A New Interference Phenomenon in Sub-60nm Nitride-Based Flash Memory
Yao‐Wen Chang, Guan-Wei Wu, Ping‐Yen Chen, C.H. Chen, Ingon Yang, C.Y. Chin, I. J. Huang, Wen-Jer Tsai, T.C. Lu, W.P. Lu, K.C. Chen, C. Y. Lu · 2007
It is the first time to disclose that the similar interference from adjacent wordlines as found in floating-gate flash memory also exists in nitride-based flash memory. For sub-60nm nitride-based flash technologies, this interference effect cannot be ignored any more and should be well taken into consideration when defining the operation window of the memory products.