An Adaptive-Rate Error Correction Scheme for NAND Flash Memory
Te-Hsuan Chen, Yu-Ying Hsiao, Yu-Tsao Hsing, Cheng‐Wen Wu · 2009
ECC has been widely used to enhance flash memory endurance and reliability. In this work, we propose an adaptive-rate ECC scheme with BCH codes that is implemented on the flash memory controller. With this scheme, flash memory can trade storage space for higher error correction capability to keep it usable even when there is a high noise level.