A Rugged LDMOS for LBC5 Technology
J. Lin P. Hower · 2005
This paper presents a new method of enhancing the SOA of n-channel Ldmos transistors. Attention is focused on those applications where “Electrical SOA” is important and where the power pulse time is typically a few µs or less. Typical applications include gate drives, H-bridge commutation, and self-protection against ESD pulses.