The design of CMOS cellular neural network (CNN) using the neuron-bipolar junction transistor (νBJT)
Chiou-Ling Yeh, Chung‐Yu Wu · 2003
In this paper, two CMOS implementations of the cellular neural network (CNN) are presented based on the neuron-bipolar junction transistor (/spl nu/BJT) which consists of the parasitic PNP bipolar junction transistor and the spreading base resistor array in the CMOS process. In the first design, the /spl nu/BJT is used to implement the neuron and weights of the cell. In the second design, it is used to implement the current summation and weights of the cell, and a diode structure is proposed to realize the neuron. For programmable capability the resistor in the /spl nu/BJT can be replaced by a tunable MOS resistor. The two kinds of circuits have been designed and fabricated in 0.6 /spl mu/m single-poly-triple-metal n-well CMOS process.