Pay-As-You-Go
Moinuddin K. Qureshi · 2011
Phase Change Memory (PCM) suffers from the problem of limited write endurance. This problem is exacerbated because of the high variability in lifetime across PCM cells, resulting in weaker cells failing much earlier than nominal cells. Ensuring long lifetimes under high variability requires that the design can correct a large number of errors for any given memory line. Unfortunately, supporting high levels of error correction for all lines incurs significantly high overhead, often exceeding 10% of overall memory capacity. Such an overhead may be too high for wide-scale adoption of PCM, given that memory market is typically very cost-sensitive.