Flash Oxide Scalability Model and Impact of Program/Erase Method
Amr Haggag, Peter Kuhn, P. Ingersoll, Chi-nan Li, T.S. Harp, A. Hoefler, D. Burnett, Kelly Baker, Ko-Min Chang · IEEE International Integrated Reliability Workshop final report · 2006
We discuss Flash oxide scalability model of various program/erase methods within the constraint of high performance (fast program/erase times) and high reliability (data retention). We show that HCI programming with FN channel erase (HCI/CE) offers the best scalable solution compared to other common methods, HCI programming with FN edge erase (HCI/EE) and uniform channel FN program erase (UCPE).