Novel bi-directional tunneling program/erase NOR (BiNOR)-type flash EEPROM
Evans Ching-Song Yang, Cheng-Jye Liu, Ming-Chi Liaw, Tien‐Sheng Chao, C.C.-H. Hsu · IEEE Transactions on Electron Devices · 1999
This paper presents a novel flash memory cell, BiNOR, suitable for high-speed, low-power, and high-performance application. The proposed BiNOR structure allows random access, channel Fowler-Nordheim (FN) tunneling program/erase in a NOR-type array (previously, channel FN tunneling program/erase could only be implemented in a NAND array). Using the designated localized P-well structure, BiNOR realizes the hot hole free, low-power bi-directional channel FN tunneling program and erase, and alleviates the oxide instability induced during source erase in the NOR-type flash memory.