A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme
Kyomin Sohn, Taesik Na, Indal Song, Yong Sub Shim, Wonil Bae, Sanghee Kang, Dong Su Lee, Han-Gyun Jung, Seok-Hun Hyun, Hanki Jeoung, Kiwon Lee, Jun‐Seok Park, Jongeun Lee, Byung-Hyun Lee, Inwoo Jun, Juseop Park, Jung Hwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung · IEEE Journal of Solid-State Circuits · 2012
A 1.2 V 4 Gb DDR4 SDRAM is presented in a 30 nm CMOS technology. DDR4 SDRAM is developed to raise memory bandwidth with lower power consumption compared with DDR3 SDRAM. Various functions and circuit techniques are newly adopted to reduce power consumption and secure stable transaction. First, dual error detection scheme is proposed to guarantee the reliability of signals. It is composed of cyclic redundancy check (CRC) for DQ channel and command-address (CA) parity for command and address channel. For stable reception of high speed signals, a gain enhanced buffer and PVT tolerant data fetch scheme are adopted for CA and DQ respectively. To reduce the output jitter, the type of delay line is selected depending on data rate at initial stage. As a result, test measurement shows 3.3 Gb/s DDR operation at 1.14 V.