A research of dual-port SRAM cell using 8T
Kai-ji Zhang, Kun Chen, Weitao Pan, Peijun Ma · 2010
High speed, low power and compatibility with standard technology Static random access memory (SRAM) is essential for system on chip (SoC) technology. In this paper, we first present a 6T-SRAM (1WR) and two types of 8T-SRAM cell(2WR 1W1R). After that how the (1W1R) cell work with external unit is explained, and we compare the SNM sensitivity and the write/read operations time of 1WR 1W1R cell.