Modelling of magnetoresistive micro-sensors
Ernie W. Hill · 1999
In order to simulate magnetoresistive devices a set of simple models have been defined which allow the calculation of the resistance as a function of magnetic field for a given device geometry. The physical parameters of the model can be entered in a SPICE model statement. This model statement is then translated to an equivalent circuit using a SPICE pre-processor. The model of the MR element consists of a linear resistor and a nonlinear voltage controlled voltage source. In order to simulate the effect of applied magnetic fields, a voltage across a dummy resistor is used to represent the applied field. Track capacitance and inductance are also included in the model.