Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm2 Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology
Young‐Woo Park, Jungdal Choi, Changseok Kang, Changhyun Lee, Yuchoel Shin, Bonghyn Choi, Juhung Kim, Sanghun Jeon, Jongsun Sel, Jintaek Park, Kihwan Choi, Taehwa Yoo, Jaesung Sim, Kinam Kim · 2006
A highly manufacturable 32Gb multi-level NAND flash memory with 0.0098 μm2cell size using 40nm TANOS cell technologies has been successfully developed for the first time. The main key technologies of 40nm 32Gb NAND flash are advanced high N.A immersion photolithography with off-axis illumination system, advanced blocking oxide of the TANOS cell, and PVD tungsten and flowable oxide for bit line