Improved Selectively δ-Doped GaAs/InGaAs Double-Quantum-Well Pseudomorphic HFET's Utilizing a Buried P-Layer on the Buffer
Ming-Jer Kao, Wei‐Chou Hsu, H. M. Shieh · Japanese Journal of Applied Physics · 1993
This letter demonstrates a new double-quantum-well (DQW) selectively δ-doped GaAs/InGaAs HFET's utilizing a buried lightly doped p-layer on the GaAs buffer prepared by low-pressure metalorganic chemical vapor deposition (MOCVD). Pinch-off characteristic and transconductance are remarkably improved in the DQW HFET's by using a buried p-layer. The extrinsic transconductances of the DQW HFET's with and without the buried p-layer are 240 mS/mm and 190 mS/mm, respectively.