256‐bit elastic store cmos LSI
Hideki Fukuda, Hiroshi Yasukawa, Norihiko Ohwadas · Electronics and Communications in Japan (Part I Communications) · 1980
Abstract This paper reports the design and characteristics of the 256‐bit elastic store (ES) CMOS LSI. The elastic store circuit absorbs phase differences of signals and is one kind of First‐In‐First‐Out (FIFO) Read/Write memory with the function of application to multiplex. The circuit is equipped with an elastic function which can perform write and read of the data independently and other functions such as reset and inhibit of the address counter and phase comparator. As CMOS circuits, NAND gate at store cell and D‐F/F with reset terminals at address counter are used to obtain stabilization, high‐speed operation and low‐power consumption. As the result of a prototype LSI, a performance at more than 9 MHz under the worst condition of VDD = 4.75 V and Ta = 70°C and the characteristics of high speed and low power consumption of 125 mW have been obtained. Its possible application to various equipment for digital network in PCM secondary group is discussed.